Excited-state absorption in NdAl3(BO3)4 laser crystal
Excited-state absorption in NdAl3(BO3)4 laser crystal
复制标题
NdAl3(BO3)4 激光晶体的激发态吸收
DOI：
10.1063/1.1579123
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发表时间：
2003
影响因子：
4
通讯作者：
Z. Luo
中科院分区：
文献类型：
--
作者：
A. Brenier;D. Jaque;J. G. Solé;Z. Luo
用激发态激发技术研究了NdAl_3(BO_3)_4(NAB)晶体在主激光谱线(1060 nm和1338 nm)附近的激发态吸收。涉及的跃迁是从4F3/2能级向4G7/2+4G9/2+2K13/2能级(1300-1400 nm范围)或向2G9/2+4G11/2+2D3/2+2K15/2能级(1020-1100 nm范围)。为了得到各向异性晶体的截面(Cm2)，我们进行了扩展到各向异性晶体的Judd-Ofet分析。在每种情况下，ESA峰与激光发射峰不一致，但在1338 nm处观察到有效激光发射截面的减小。最后，应用Judd-Ofet公式得到的数值被用来估计抽运领域中ESA对激光器性能的影响。研究发现，它的贡献不大，表明NaB是发射波长为1060 nm和1338 nm的高效高功率微芯片激光器的极佳候选者。
We present an investigation in NdAl3(BO3)4 (NAB) crystal of the excited-state absorption (ESA) around the main laser lines (1060 and 1338 nm) by the so called excited-state excitation technique. The involved transitions are from the 4F3/2 level toward the 4G7/2+4G9/2+2K13/2 levels (1300–1400 nm range) or toward the 2G9/2+4G11/2+2D3/2+2K15/2 levels (1020–1100 nm range). We have performed the Judd–Ofelt analysis extended to anisotropic crystals in order to get the cross sections (cm2). In each case, the ESA peaks do not coincide with the laser emission ones, but a reduction of the effective laser emission cross section is observed at 1338 nm. Finally, the values obtained from the application of the Judd–Ofelt formalism have been used to estimate the influence of ESA in the pumping domain on the laser performance. It has been found that its contribution is not significant, indicating that NAB is an excellent candidate for efficient high-power microchip lasers emitting at 1060 and 1338 nm.