Cryogenic Storage Memory with High‐Speed, Low‐Power, and Long‐Retention Performance
Cryogenic Storage Memory with High‐Speed, Low‐Power, and Long‐Retention Performance
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具有高速、低功耗和长保留性能的低温存储内存
DOI：
10.1002/aelm.202201299
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发表时间：
2023
影响因子：
6.2
通讯作者：
Yu, Shimeng
中科院分区：
文献类型：
--
作者：
Hur, Jae;Kang, Dongsuk;Moon, Dong‐Il;Yu, Ji‐Man;Choi, Yang‐Kyu;Yu, Shimeng
低温计算因其在云计算、航空航天电子和量子计算等领域的广泛应用而受到关注。低温（例如 77 K）可实现更高的开关速度、更高的可靠性并抑制噪声。尽管人们对低温动态随机存取存储器进行了研究，但低温 NAND 闪存并未得到深入研究。本文报道了一种基于电荷陷阱机制的低温存储存储器。通过去除传统硅/氧化物/氮化物/氧化物/硅（SONOS）型闪存中的隧道氧化物（从而成为硅/氧化物/氮化物/硅（SONS）），旨在实现高速和低功耗操作，同时缓解低温环境导致的保留不良问题。 FinFET 结构的 SONS 存储器件经过实验验证，栅极长度为 20-30 nm，可以在 77 K 下以低电压（约 6.5 V）和高速（约 5 µs）运行实现保持问题（>10 年）。为了进行整体系统级评估，对主机微处理器和固态驱动器之间的接口进行了基准模拟，考虑了冰箱冷却成本和两个温度（300 和 77）下通过电缆的热损失。 K）。结果表明，与低温技术中的 SONOS 对应产品相比，SONS 型低温存储系统在延迟和功耗方面均显示出超过 81% 的改进。
Cryogenic‐computing draws attention due to its variety of applications such as cloud‐computing, aerospace electronics, and quantum computing. Low temperature (e.g., 77 K) enables higher switching speed, improved reliability, and suppressed noise. Although cryogenic dynamic random‐access memory is studied, the cryogenic NAND flash is not explored intensively. Herein, a cryogenic storage memory based on the charge‐trap mechanism is reported. By removing the tunneling oxide from the conventional silicon/oxide/nitride/oxide/silicon (SONOS)‐type flash memory (therefore becoming silicon/oxide/nitride/silicon (SONS)), high‐speed and low‐power operation is aimed to be achieved while relieved from poor retention issue thanks to the cryogenic environment. The FinFET‐structured SONS memory device is demonstrated experimentally with gate length of 20–30 nm, which can achieve the retention issue (>10 years) with low voltage (≈6.5 V) and high speed (≈5 µs) operation at 77 K. To have a holistic system‐level evaluation, benchmark simulation of an interface between a host microprocessor and solid‐state‐drive is conducted, considering the refrigerator cooling cost and the heat loss via cables across two temperatures (300 and 77 K). The results show that the SONS‐type cryogenic storage system shows over 81% improvement in both latency and power, compared to the SONOS counterpart located at cryogenics.