MOVPE growth of N-polar GaN/AlGaN/GaN heterostructure on small off-cut substrate for flat interface
MOVPE growth of N-polar GaN/AlGaN/GaN heterostructure on small off-cut substrate for flat interface
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在小切边基板上 MOVPE 生长 N 极 GaN/AlGaN/GaN 异质结构以实现平坦界面
DOI：
10.1109/iciprm.2016.7528837
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
T. Matsuoka
中科院分区：
文献类型：
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作者：
K. Prasertsuk;S. Tanaka;T. Tanikawa;K. Shojiki;T. Kimura;A. Miura;R. Nonoda;F. Hemmi;S. Kuboya;R. Katayama;T. Suemitsu;T. Matsuoka
采用金属有机物气相外延（MOVPE）技术，在蓝宝石衬底上成功地生长出了N极性GaN/AlxGa 1 −xN/GaN异质结构，其与a面的夹角为0.8°。N极性GaN/AlxGa 1 −xN/GaN异质结构的2DEG已通过17至300 K的霍尔效应测量得到证实。在室温下，测量该异质结构的面载流子浓度和2DEG迁移率分别为1.4 × 1013 cm-2和1250 cm 2/Vs。迁移率随温度的降低而单调增加，在17 K时达到饱和，达到3050 cm 2/Vs。在原始实验中获得的这些值显示了N极性GaN HEMT的潜力。
The smooth surface of an N-polar GaN/AlxGa1−xN/GaN heterostructure was successfully grown by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates with a small off-cut angle of 0.8° toward the a-plane. The 2DEG of an N-polar GaN/AlxGa1−xN/GaN heterostructure has been confirmed by Hall-effect measurement from 17 to 300 K. The sheet carrier concentration and the 2DEG mobility of this heterostructure were measured to be 1.4 × 1013cm−2and 1250 cm2/Vs at room temperature, respectively. The mobility monotonically increased with decreasing temperature and saturated at a value of 3050 cm2/Vs at 17 K. These values obtained in the primitive experimental show the potential of an N-polar GaN HEMT.