Effects of discharge pressure on the properties of Ag/Ni superlattices prepared by facing‐target sputtering
Effects of discharge pressure on the properties of Ag/Ni superlattices prepared by facing‐target sputtering
复制标题
放电压力对面向靶溅射制备Ag/Ni超晶格性能的影响
DOI：
10.1063/1.362036
复制
发表时间：
1996
影响因子：
3.2
通讯作者：
H. Wong
中科院分区：
文献类型：
--
作者：
Xianting Zeng;H. Wong
磁性多层膜的巨磁电阻效应受界面粗糙度的影响很大。我们用一种新的对靶溅射方法在康宁公司的7059玻璃衬底上制备了[Ag/Ni]60超晶格，观察到界面粗糙度可以通过改变放电压力来控制。在PAR≊10mTorr下制备的样品具有最尖锐的界面、良好的(111)织构和最大的巨磁电阻效应(Δρ/ρS在室温下为9%)。较低的PAR促进界面混合，而较高的PAR会导致界面更加粗糙，并出现结构缺陷。这两种情况都削弱了反铁磁耦合强度，从而降低了磁流变效应。当PAR≥为30mTorr时，我们观察到多层结构的进一步退化。这些样品中的GMR效应消失了。低温退火可改善界面和薄膜结构的平坦度，而高温退火(≳300 °C)可使多层结构分解。
Giant magnetoresistance (GMR) effect in magnetic multilayered thin films is strongly affected by interface roughness. We prepared [Ag/Ni]60 superlattices on Corning’s 7059 glass substrates using a novel facing‐target sputtering method and observed that the interface roughness can be controlled by varying the discharge pressure (PAr). The samples prepared at PAr≊10 mTorr exhibit sharpest interfaces, good (111) texture, and largest GMR effects (Δρ/ρs=9% at room temperature). Lower PAr promotes interface mixing while higher PAr results in much rougher interfaces and emergence of structural defects. Both cases weaken the antiferromagnetic coupling strength and thus reduce the MR effect. When PAr≥30 mTorr, we observed a further degradation of the multilayered structure. The GMR effects in these samples disappeared. Low‐temperature annealing can improve the flatness of the interfaces and film structure, while higher‐temperature annealing (≳300 °C) decomposes the multilayer structures.