Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application
Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application
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DOI：
10.1063/1.3431297
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发表时间：
2010-05
影响因子：
4
通讯作者：
Jiayong Zhang;Xiaofeng Wang;Xiaodong Wang;Huili Ma;Kaifang Cheng;Z. Fan;Yan Li;A. Ji;Fuhua Yang
中科院分区：
文献类型：
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作者：
Jiayong Zhang;Xiaofeng Wang;Xiaodong Wang;Huili Ma;Kaifang Cheng;Z. Fan;Yan Li;A. Ji;Fuhua Yang
提出了一种基于牺牲间隔层工艺和传统光刻技术的纳米间隙电极制备方法，制备出了17 nm的纳米间隙电极。我们已经将此方法转移到横向相变随机存取存储器（PCRAM）器件的制造。给出了4.6 μm常规光刻和88nm基于该技术的带隙宽度的电学特性。研究发现，由于纳米间隙电极工艺的引入，器件的阈值电压和直流功耗显著降低。我们的方法不仅可以提高PCRAM的制作效率，而且很容易转移到其他纳米电子学应用。
A nanogap electrode fabrication method was developed and nanogap electrode as small as 17 nm was achieved based on sacrificial spacer process and conventional lithography. We have transferred this method to lateral phase-change random access memory (PCRAM) device fabrication. The electrical characterizations of 4.6 μm gap width using conventional lithography and 88 nm width based on this technology are shown. It is found that the threshold voltage and the dc power consumption are remarkably decreased due to nanogap electrode process. Our method cannot only improve the fabrication efficiency of PCRAM but also be easily transferred to other nanoelectronics applications.