Memristive crossbar array with applications in image processing
Memristive crossbar array with applications in image processing
复制标题
忆阻交叉阵列在图像处理中的应用
DOI：
10.1007/s11432-011-4410-9
复制
发表时间：
2012-02-01
影响因子：
8.8
通讯作者：
Liao XiaoFeng
中科院分区：
文献类型：
--
作者：
Hu XiaoFang;Duan ShuKai;Liao XiaoFeng
忆阻器是一种具有记忆能力的非线性电阻器。其电阻随通过它的电荷量或磁通量的大小而变化。作为第四种基本电路元件，它在许多领域都有巨大的潜在应用，并有望推动电路理论的一场革命。通过数值模拟和电路建模，分析了忆阻器的基本理论和特性，进而提出了一种基于忆阻器的交叉阵列。该阵列能够实现对二进制、灰度和彩色图像的存储和输出。一系列计算机模拟证明了所提方案的有效性。由于忆阻交叉阵列在并行信息处理方面的优势，所提方法有望应用于高速图像处理。
A memristor is a kind of nonlinear resistor with memory capacity. Its resistance changes with the amount of charge or flux passing through it. As the fourth fundamental circuit element, it has huge potential applications in many fields, and has been expected to drive a revolution in circuit theory. Through numerical simulations and circuitry modeling, the basic theory and properties of memristors are analyzed, and a memristorbased crossbar array is then proposed. The array can realize storage and output for binary, grayscale and color images. A series of computer simulations demonstrates the effectiveness of the proposed scheme. Owing to the advantage of the memristive crossbar array in parallel information processing, the proposed method is expected to be used in high-speed image processing.