Ultrahigh Energy Storage Performance of Lead-Free Oxide Multilayer Film Capacitors via Interface Engineering
Ultrahigh Energy Storage Performance of Lead-Free Oxide Multilayer Film Capacitors via Interface Engineering
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DOI：
10.1002/adma.201604427
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发表时间：
2017-02-02
影响因子：
29.4
通讯作者：
Jia, Chun-Lin
中科院分区：
文献类型：
--
作者：
Sun, Zixiong;Ma, Chunrui;Jia, Chun-Lin
通过无铅氧化物多层膜的界面工程，在室温下获得了52.4Jcm（-3）的超高能量存储密度和72.3%的最佳效率。此外，优异的热稳定性能为薄膜系统在现代电子和功率模块中的广泛应用提供了坚实的基础。
Ultrahigh energy storage density of 52.4 J cm(-3) with optimistic efficiency of 72.3% is achieved by interface engineering of epitaxial lead-free oxide multi-layers at room temperature. Moreover, the excellent thermal stability of the performances provides solid basis for widespread applications of the thin film systems in modern electronic and power modules in harsh working environments.