Spectral diffusion time scales in InGaN/GaN quantum dots
Spectral diffusion time scales in InGaN/GaN quantum dots
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DOI：
10.1063/1.5088205
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发表时间：
2019-03-18
影响因子：
4
通讯作者：
Holmes, Mark J.
中科院分区：
文献类型：
--
作者：
Gao, Kang;Springbett, Helen;Holmes, Mark J.
通过测量时变发射光谱和单光子发射强度自相关时间，对单光子发射InGaN/GaN量子点的光谱扩散现象进行了详细的时间分析。通过光激发载流子进入GaN势垒材料和直接进入InGaN，研究了激发相关现象。对InGaN的激发表明，最快的环境波动发生在长达几百纳秒的时间尺度上：比以前在GaN量子点中测量的时间长一个数量级。尽管实验测得的线宽很宽，但这样长的时间尺度在未来可能会产生难以分辨的光子。由AIP Publishing授权出版。
A detailed temporal analysis of the spectral diffusion phenomenon in single photon emitting InGaN/GaN quantum dots (QDs) is performed via measurements of both time-varying emission spectra and single photon emission intensity autocorrelation times. Excitation dependent phenomena are investigated via the optical excitation of carriers into the GaN barrier material and also directly into InGaN. Excitation into InGaN reveals that the fastest environmental fluctuations occur on timescales as long as a few hundreds of nanoseconds: an order of magnitude longer than previously measured in GaN QDs. Such long time scales may in future allow for the generation of indistinguishable photons in spite of the fact that the experimentally measured linewidths are broad. Published under license by AIP Publishing.