Synthesis of nanocrystalline diamond thin films from an Ar{endash}CH{sub 4} microwave plasma
Synthesis of nanocrystalline diamond thin films from an Ar{endash}CH{sub 4} microwave plasma
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DOI：
10.1063/1.366668
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发表时间：
1998-06
影响因子：
3.2
通讯作者：
D. Zhou;T. McCauley;L. Qin;A. Krauss;D. Gruen
中科院分区：
文献类型：
--
作者：
D. Zhou;T. McCauley;L. Qin;A. Krauss;D. Gruen
在Ar{endash}CH{sub 4}微波放电中，不添加分子氢，合成了纳米金刚石薄膜。X射线衍射，透射电子显微镜，和电子能量损失谱表征表明，该薄膜由一个纯的结晶金刚石相非常小的晶粒尺寸范围从3到20 nm。原子力显微镜分析表明，纳米金刚石薄膜的表面保持光滑的膜厚度无关。此外，反应气体的压力，这强烈地影响在Ar{endash}CH{sub 4}等离子体中的C{sub 2}二聚体的浓度以及薄膜的生长速率，已被发现是纳米金刚石薄膜沉积的关键参数。美国物理学会（American Institute of Physics）
Nanocrystalline diamond thin films have been synthesized in an Ar{endash}CH{sub 4} microwave discharge, without the addition of molecular hydrogen. X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy characterizations show that the films consist of a pure crystalline diamond phase with very small grain sizes ranging from 3 to 20 nm. Atomic force microscopy analysis demonstrates that the surfaces of the nanocrystalline diamond films remain smooth independent of the film thicknesses. Furthermore, the reactant gas pressure, which strongly affects the concentration of C{sub 2} dimer in the Ar{endash}CH{sub 4} plasma as well as the growth rate of the films, has been found to be a key parameter for the nanocrystalline diamond thin film depositions. {copyright} {ital 1998 American Institute of Physics.}