PHYSICS OF SEMICONDUCTORS AND DIELECTRICS FABRICATION AND INVESTIGATION OF INDIUM NITRIDE POSSESSING FERROMAGNETIC PROPERTIES
PHYSICS OF SEMICONDUCTORS AND DIELECTRICS FABRICATION AND INVESTIGATION OF INDIUM NITRIDE POSSESSING FERROMAGNETIC PROPERTIES
复制标题
半导体物理和介电学制备以及具有铁磁性能的氮化铟的研究
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
O. Tolbanov
中科院分区：
文献类型：
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作者：
.. S. Khludkov;I. Prudaev;O. Tolbanov
综述了自2000年以来关于InN掺杂杂质使其具有铁磁性能和InN的磁性能的科学文献。理论和实验研究表明，掺杂过渡金属和稀土元素的InN在室温以上具有铁磁性质，是一种很有前途的自旋电子学材料。
An overview of the scientific literature since 2000 on InN doping with impurities giving it ferromagnetic properties and on the magnetic properties of InN is presented. According to theoretical and experimental studies, InN doped with transition metals and rare earth elements possesses ferromagnetic properties at temperatures above room temperature and is a material promising for spintronics.