Fabrication of Suspending GAN Microstructures With Combinations of Anisotropic and Isotropic Dry Etching Techniques
Fabrication of Suspending GAN Microstructures With Combinations of Anisotropic and Isotropic Dry Etching Techniques
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DOI：
10.1115/micronano2008-70037
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
J. Lv;Zhenchuan Yang;K. J. Chen
中科院分区：
文献类型：
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作者：
J. Lv;Zhenchuan Yang;K. J. Chen
介绍了一种在硅衬底上制作氮化镓基微机电器件的方法。各种悬浮的GaN微结构已经使用基于ICP（电感耦合等离子体）的牺牲蚀刻的下层硅与各向异性和各向同性蚀刻技术的组合来制造，使得可以实现具有最小化的横向底切的深度释放的独立微结构。采用基于Cl 2的ICP-RIE（反应离子蚀刻）干法蚀刻技术来图案化氮化镓。实验结果表明，采用这种两步干法释放技术，可以获得高深宽比、大气隙的自支撑GaN微结构。通过扫描电子显微镜（SEM）对制造结果进行了表征。
A method for fabricating gallium nitride (GaN) based microelectromechanical (MEM) devices on silicon substrate was demonstrated. Various suspended GaN microstructures have been fabricated using ICP (Inductive coupled plasma)-based sacrificial etching of the underlying silicon with combination of both anisotropic and isotropic etching techniques, so that deeply released freestanding microstructures with minimized lateral undercut can be achieved. Cl2 -based ICP-RIE (Reactive ion etching) dry etching technique is employed to pattern gallium nitride. The experimental results show that freestanding GaN microstructures with large air gap of high depth-to-width ratio can be realized by employing such two-step dry releasing technique. Fabrication results have been characterized by scanning electron microscope (SEM).Copyright © 2008 by ASME