n-Type Organic Field-Effect Transistors with High Electron Mobilities Based on Thiazole−Thiazolothiazole Conjugated Molecules
n-Type Organic Field-Effect Transistors with High Electron Mobilities Based on Thiazole−Thiazolothiazole Conjugated Molecules
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DOI：
10.1021/cm071505s
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发表时间：
2007-10
影响因子：
8.6
通讯作者：
Masashi Mamada;J. Nishida;D. Kumaki;S. Tokito;Y. Yamashita
中科院分区：
文献类型：
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作者：
Masashi Mamada;J. Nishida;D. Kumaki;S. Tokito;Y. Yamashita
合成了两种新型的含三氟甲基苯基的噻唑类化合物，并用差示扫描量热法、X-射线单晶分析、UV-−-Vis吸收光谱、循环伏安、场效应晶体管特性和X-射线衍射仪对其结构进行了表征。噻唑类化合物−的场效应管特性强烈地依赖于氮的位置。这种带有2-(4-三氟甲基苯基)噻唑单元的衍生物提供了一种高性能的FET器件，具有底接触结构，电子迁移率高达0.12cm2 V-1 S-1。此外，采用顶接触结构，根据表面修饰的不同，获得了高电子迁移率0.24−0.64cm2V-1 S-1和低阈值电压18−24V。研究了分子结构、分子堆积、电学特性、薄膜结构与FET性能之间的关系。
Two novel thiazolothiazole derivatives with trifluoromethylphenyl groups were synthesized and characterized by differential scanning calorimetry, X-ray single crystal analysis, UV−vis absorption spectroscopy, cyclic voltammetry, field-effect transistor (FET) characteristics, and X-ray diffraction. The FET characteristics of thiazole−thiazolothiazole derivatives are strongly dependent on the nitrogen positions. The derivative with a 2-(4-trifluoromethylphenyl)thiazole unit afforded a high performance FET device that showed a high electron mobility of 0.12 cm2 V-1 s-1 with a bottom contact configuration. Moreover, with a top contact configuration, high electron mobilities of 0.24−0.64 cm2 V-1 s-1 and low threshold voltages of 18−24 V depending on the surface modification were achieved. The relationship between molecular structure, molecular packing, electrical characteristics, film structure, and FET performance were investigated.