Vertically Aligned 13 C Single-Walled Carbon Nanotubes from No-flow Alcohol Chemical Vapor Deposition and their Root Growth Mechanism
Vertically Aligned 13 C Single-Walled Carbon Nanotubes from No-flow Alcohol Chemical Vapor Deposition and their Root Growth Mechanism
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发表时间：
2007
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通讯作者：
R. Xiang;Zhengyi Zhang;K. Ogura;J. Okawa;E. Einarsson;Y. Miyauchi;J. Shiomi;S. Maruyama
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作者：
R. Xiang;Zhengyi Zhang;K. Ogura;J. Okawa;E. Einarsson;Y. Miyauchi;J. Shiomi;S. Maruyama
我们提出了一种改进的无流动化学气相沉积(CVD)方法，以乙醇为原料成功地合成了定向C标记的单壁碳纳米管(SWNT)阵列，使利用少量碳源高效生长成为可能。共振拉曼光谱证实了用这种替代方法合成了高质量的单壁碳纳米管，这也表明在生长过程中质量是均匀的。C标记的单壁碳纳米管的合成为乙醇CVD中的根生长机制提供了清晰而坚实的证据，这与透射电子显微镜的观察结果相吻合。
We present the successful synthesis of aligned C labeled single-walled carbon nanotube (SWNT) arrays from alcohol by a modified no-flow chemical vapor deposition (CVD) method which makes possible efficient growth using a small amount of carbon source. Synthesis of high-quality SWNTs by this alternate method was confirmed by Resonance Raman spectroscopy, which also showed the quality is uniform during the growth. The synthesis of C labeled SWNTs provides clear and solid evidence for the root growth mechanism in alcohol CVD, which agrees well with the TEM observations.