Boron-Doped Graphene Directly Grown on Boron-Doped Diamond for High-Voltage Aqueous Supercapacitors
Boron-Doped Graphene Directly Grown on Boron-Doped Diamond for High-Voltage Aqueous Supercapacitors
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DOI：
10.1021/acsaem.8b02120
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发表时间：
2019-02-01
影响因子：
6.4
通讯作者：
Yang, Baohe
中科院分区：
文献类型：
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作者：
Cui, Dongdong;Li, Hongji;Yang, Baohe
采用电子辅助热丝化学气相沉积（EA-HFCVD）法制备了硼掺杂石墨烯/硼掺杂金刚石（BG/BDD）复合材料。硼原子被有效地掺杂到石墨烯和金刚石中，并且BG片在BDD上垂直生长。BG的硼含量影响BG/BDD电极性能，并且当BG在50 sccm的B源气体流速下生长时，电极具有高的比电容。BG/BDD电极的电化学行为进行了分析，在两个正和负电位窗口中的三电极配置使用饱和NaCl水溶液作为电解质;一个对称的超级电容器（SSC），随后制造评估的BG/BDD电极的实际应用。基于BG/BDD的器件在3.2 V的高压下工作。SSC在221 W kg（-1）的功率密度下提供79.5 Wh kg（-1）的高能量密度，在30.7 Wh kg（-1）的能量密度下提供18.1 kW kg（-1）的高功率密度;在0-2.5 V范围内，其比电容保持99.6（3.2 A g（-1），9000次循环）电压范围，0-3 V时为96.1%（12.8 A g（-1），10000次循环）范围内;因此，该器件在高工作电压下具有长期稳定性优势。
Boron-doped graphene/boron-doped diamond (BG/BDD) is synthesized by an electron-assisted hot-filament chemical vapor deposition (EA-HFCVD) method. Boron atoms are effectively doped into the graphene and diamond, and BG sheets are grown vertically on the BDD. The boron content of the BG affects the BG/BDD-electrode performance, and the electrode has a high specific capacitance when the BG is grown at a B-source-gas flow rate of 50 sccm. The electrochemical behavior of the BG/BDD electrode is analyzed in both positive and negative potential windows in three-electrode configurations using saturated aqueous NaCl as the electrolyte; a symmetric supercapacitor (SSC) is subsequently fabricated to evaluate the practical application of the BG/BDD electrode. The BG/BDD-based device operates at a high voltage of 3.2 V. The SSC delivers a high energy density of 79.5 Wh kg(-1) at a power density of 221 W kg(-1), and a high power density of 18.1 kW kg(-1) at an energy density of 30.7 Wh kg(-1); it also retains 99.6% of its specific capacitance in the 0-2.5 V (3.2 A g(-1), 9000 cycles) voltage range and 96.1% in the 0-3 V (12.8 A g(-1), 10 000 cycles) range; consequently, the device has a long-term stability advantage at high operating voltages.