Thermoelectric Properties of Co- and Mn-Doped Al2Fe3Si3
Thermoelectric Properties of Co- and Mn-Doped Al2Fe3Si3
复制标题
Co 和 Mn 掺杂 Al2Fe3Si3 的热电性能
DOI：
10.1007/s11664-018-6735-2
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发表时间：
2018
影响因子：
2.1
通讯作者：
H. Muta
中科院分区：
文献类型：
--
作者：
Yasutaka Shiota;Kunio Yamamoto;Y. Ohishi;K. Kurosaki;H. Muta
Al_2Fe_3Si_3是一种具有良好应用前景的环境友好型半导体热电材料。其本征载流子浓度为5 × 1019 cm−3，显示p型导电。在这篇文章中，我们报告的载流子掺杂Al 2Fe 3Si 3的热电性能。Co或Mn分别取代Fe用于电子或空穴掺杂。Al 2Fe 3 − xMxSi 3（M=Co或Mn; x = 0.1-1.0（Co）和0.1-0.3（Mn））样品通过电弧熔炼、随后的放电等离子烧结和热处理来合成。掺杂Co和Mn的样品显示出n型的霍尔载流子浓度为1.4 × 1020 cm−3至5.1 × 1020 cm−3，p型的霍尔载流子浓度为1.3 × 1020 cm−3至1.3 × 1021 cm−3。在相同的载流子浓度下，n型Al 2Fe 3Si 3的Seebeck系数绝对值比p型Al 2Fe 3Si 3高，而霍尔载流子迁移率比p型Al 2Fe 3Si 3低。功率因数随着n型导电载流子浓度的增加而增加，在520 K时达到0.65 × 10−3 W/mK。另一方面，p型Al 2Fe 3Si 3的功率因数并没有随着载流子浓度的增加而增强。Co取代的Al 2Fe 3Si 3在600 K时的最大ZT值为0.09，比纯Al 2Fe 3Si 3提高了50%。
Al2Fe3Si3 is a promising semiconductor for application as an environmentally friendly thermoelectric material. Its intrinsic carrier concentration is 5 × 1019 cm−3 and shows p-type conduction. In this article, we report on the thermoelectric properties of carrier-doped Al2Fe3Si3. Co or Mn was substituted for Fe for electron or hole doping, respectively. Al2Fe3−xMxSi3 (M=Co or Mn; x = 0.1–1.0 for Co and 0.1–0.3 for Mn) samples were synthesized by arc melting followed by spark plasma sintering and heat treatment. The Co- and Mn-doped samples displayed Hall carrier concentrations of 1.4 × 1020 cm−3 to 5.1 × 1020 cm−3 for n-type and 1.3 × 1020 cm−3 to 1.3 × 1021 cm−3 for p-type conduction. The n-type Al2Fe3Si3 exhibited a higher absolute value of Seebeck coefficient and lower Hall carrier mobility than p-type Al2Fe3Si3 at the same carrier concentration. The power factor increased with increasing carrier concentration for n-type conduction, and reached 0.65 × 10−3 W/mK at 520 K. On the other hand, the power factor for p-type Al2Fe3Si3 was not enhanced with increasing carrier concentration. The maximum ZT value for Co-substituted Al2Fe3Si3 was 0.09 at 600 K, which is 50% higher than that of pure Al2Fe3Si3.
影响因子：
64.8
作者：
Zhao, Li-Dong;Lo, Shih-Han;Kanatzidis, Mercouri G.
通讯作者：
Kanatzidis, Mercouri G.
影响因子：
6.1
作者：
Jain, Anubhav;Shyue Ping Ong;Persson, Kristin A.
通讯作者：
Persson, Kristin A.
影响因子：
56.9
作者：
Heremans, Joseph P.;Jovovic, Vladimir;Snyder, G. Jeffrey
通讯作者：
Snyder, G. Jeffrey