Organic Photovoltaic Devices Using an Amorphous Molecular Material With High Hole Drift Mobility, Tris[4-(2-thienyl)phenyl]amine
Organic Photovoltaic Devices Using an Amorphous Molecular Material With High Hole Drift Mobility, Tris[4-(2-thienyl)phenyl]amine
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DOI：
10.1109/jstqe.2009.2039699
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发表时间：
2010-02
影响因子：
4.9
通讯作者：
H. Kageyama;Hitoshi Ohishi;Masatake Tanaka;Y. Ohmori;Y. Shirota
中科院分区：
文献类型：
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作者：
H. Kageyama;Hitoshi Ohishi;Masatake Tanaka;Y. Ohmori;Y. Shirota
平面p-n异质结有机光伏（OPV）器件，采用非晶分子材料，在293 K、1.0 × 105 V/cm电场下具有1.1 × 10-2 cm2/V·s的高空穴漂移迁移率，三[4-(2-噻吩基)苯基]胺（TTPA）作为电子供体，C60作为电子受体，氧化铟锡(ITO)/聚(3,4-乙烯二氧噻吩)掺杂聚(4-苯乙烯磺酸)(PEDOT:PSS) (ca.30 nm)/TTPA (30 nm)/C60 (40 nm)/LiF (0.1 nm)/Al (150 nm)，在空气质量下表现出高性能，填充因子为0.62，功率转换效率(PCE)为1.5% 1.5G 照明，强度为 100 mW/cm2。具有TTPA和C60混合夹层的p-i-n型OPV器件，ITO/PEDOT（约30 nm）/TTPA（27 nm）/TTPA:C60（1:4摩尔比，20 nm）/C60（23 nm）/LiF（0.1 nm）/Al（100 nm），在相同的照射条件下表现出更高的性能，PCE为1.8%。通过旋涂 TTPA 和 [6,6]-苯基-C61-丁酸甲酯 ([6,6]-PCBM)、ITO/PEDOT:PSS (约 30 nm)/TTPA:[6,6]-PCBM (1:4 摩尔比，约 73 nm)/LiF (0.1 nm)/Al (100 nm) 溶液制备的本体 p-n 异质结 OPV 器件，表现出PCE为1.3%。本器件的高性能归因于材料的高载流子迁移率和 TTPA 相对高的电离势。
A planar p-n heterojunction organic photovoltaic (OPV) device using an amorphous molecular material with a high hole drift mobility of 1.1 × 10-2 cm2/V·s at an electric field of 1.0 × 105 V/cm at 293 K, tris[4-(2-thienyl)phenyl]amine (TTPA), as an electron donor, and C60, as an electron acceptor, indium-tinoxide (ITO)/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrene sulfonate) (PEDOT:PSS) (ca.30 nm)/TTPA (30 nm)/C60 (40 nm)/LiF (0.1 nm)/Al (150 nm), exhibited high performance with a fill factor of 0.62 and a power conversion efficiency (PCE) of 1.5 % under air-mass 1.5G illumination at an intensity of 100 mW/cm2. A p-i-n-type OPV device having a mixed interlayer of TTPA and C60, ITO/PEDOT (ca.30 nm)/TTPA (27 nm)/TTPA:C60 (1:4 molar ratio, 20 nm)/C60 (23 nm)/LiF (0.1 nm)/Al (100 nm), exhibited higher performance with a PCE of 1.8% under the same irradiation conditions. A bulk p-n heterojunction OPV devices fabricated by spin coating from solution of TTPA and [6,6]-phenyl-C61-butyric acid methyl ester ([6,6]-PCBM), ITO/PEDOT:PSS (ca. 30 nm)/TTPA:[6,6]-PCBM (1:4 molar ratio, ca. 73 nm)/LiF (0.1 nm)/Al (100 nm), exhibited a PCE of 1.3%. The high performance of the present devices is attributed to the high charge-carrier mobilities of the materials and the relatively high ionization potential of TTPA.