Strength of silicon wafers: fracture mechanics approach
Strength of silicon wafers: fracture mechanics approach
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DOI：
10.1007/s10704-009-9324-9
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发表时间：
2009-03
影响因子：
2.5
通讯作者：
P. Rupnowski;B. Sopori
中科院分区：
文献类型：
--
作者：
P. Rupnowski;B. Sopori
本文描述了一种预测硅片机械强度分布的模型。提出了一种基于多峰威布尔分布的描述含有表面、边缘和体相缺陷的脆性材料强度的广义表达式。进一步分析了铸造的、未抛光的光伏(PV)晶片的具体情况。假设表面微裂纹是硅片断裂的主要机制，该模型预测了光伏硅的强度分布，与文献中的实验结果吻合较好。
This paper describes a model to predict mechanical strength distribution of silicon wafers. A generalized expression, based on a multimodal Weibull distribution, is proposed to describe the strength of a brittle material with surface, edge, and bulk flaws. The specific case of a cast, unpolished photovoltaic (PV) wafer is further analyzed. Assuming that surface microcracks constitute the dominant mechanism of wafer breakage, this model predicts the strength distribution of PV silicon that matches well the experimental results available in the literature.