Double gate lateral IGBT on partial membrane
Double gate lateral IGBT on partial membrane
复制标题
DOI：
10.1088/1674-4926/31/2/024002
复制
发表时间：
2010-02
影响因子：
5.1
通讯作者：
X. Luo;Lei Lei-Lei;Zhang Wei;Zhang Bo;Zhaoji Li
中科院分区：
文献类型：
--
作者：
X. Luo;Lei Lei-Lei;Zhang Wei;Zhang Bo;Zhaoji Li
提出了一种在部分膜上具有阴极和阳极栅极的新型SOI light（侧绝缘栅双极晶体管）。当负极栅极上施加负电压时，可获得低导通电阻。在阻塞状态下，阴极栅极缩短为阴极，阳极栅极缩短为阳极，导致开关速度快。此外，去除漂移区下的部分硅衬底可以避免在埋藏的氧化物下收集电荷，从而在膜下释放电位线，从而提高击穿电压（BV）。此外，由于没有漏极-衬底电容，获得了高开关速度。最后，横向掺杂分布的均匀性和变化性的结合有助于实现高BV和低特殊导通电阻。与传统的light相比，该结构具有高电流能力、低特殊导通电阻和两倍的BV。
A new SOI LIGBT (lateral insulated-gate bipolar transistor) with cathode- and anode-gates on partial membrane is proposed. A low on-state resistance is achieved when a negative voltage is applied to the anode gate. In the blocking state, the cathode gate is shortened to the cathode and the anode gate is shortened to the anode, leading to a fast switching speed. Moreover, the removal of the partial silicon substrate under the drift region avoids collecting charges beneath the buried oxide, which releases potential lines below the membrane, yielding an enhanced breakdown voltage (BV). Furthermore, a high switching speed is obtained due to the absence of the drain-substrate capacitance. Lastly, a combination of uniformity and variation in lateral doping profiles helps to achieve a high BV and low special on-resistance. Compared with a conventional LIGBT, the proposed structure exhibits high current capability, low special on-resistance, and double the BV.