Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product
Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product
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DOI：
10.1038/nphoton.2008.247
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发表时间：
2009-01-01
期刊：
影响因子：
35
通讯作者：
Campbell, Joe C.
中科院分区：
文献类型：
--
作者：
Kang, Yimin;Liu, Han-Din;Campbell, Joe C.
最近，硅光子学在低成本光学探测器、调制器和光源方面取得了重大进展（1-12）。然而，人们通常认为它们的性能不如基于inp的设备。虽然这在大多数情况下都是正确的，但雪崩光电探测器领域是一个例外，硅的材料特性允许高增益，比基于inp的雪崩光电探测器有更少的多余噪声，理论灵敏度提高了3 dB或更多。在这里，我们报道了一种单片生长的锗/硅雪崩光电探测器，其增益带宽积为340 GHz， k（eff）为0.09，在10 Gb s（-1）下灵敏度为228 dB m。这是目前报道的最高增益带宽产品，用于任何工作在1300纳米的雪崩光电探测器，其灵敏度相当于成熟的，市售的III - V化合物雪崩光电探测器。这项工作为未来低成本、基于cmos的锗/硅雪崩光电探测器的发展铺平了道路，这些探测器的数据速率为40 Gb s（-1）或更高。
Significant progress has been made recently in demonstrating that silicon photonics is a promising technology for low-cost optical detectors, modulators and light sources(1-12). It has often been assumed, however, that their performance is inferior to InP-based devices. Although this is true in most cases, one of the exceptions is the area of avalanche photodetectors, where silicon's material properties allow for high gain with less excess noise than InP-based avalanche photodetectors and a theoretical sensitivity improvement of 3 dB or more. Here, we report a monolithically grown germanium/silicon avalanche photodetector with a gain - bandwidth product of 340 GHz, a k(eff) of 0.09 and a sensitivity of 228 dB m at 10 Gb s(-1). This is the highest reported gain - bandwidth product for any avalanche photodetector operating at 1,300 nm and a sensitivity that is equivalent to mature, commercially available III - V compound avalanche photodetectors. This work paves the way for the future development of low-cost, CMOS-based germanium/silicon avalanche photodetectors operating at data rates of 40 Gb s(-1) or higher.