Conductive SiO2/HfO2 distributed Bragg reflector achieved by electrical breakdown and its application in GaN-based light emitters
Conductive SiO2/HfO2 distributed Bragg reflector achieved by electrical breakdown and its application in GaN-based light emitters
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DOI：
10.1063/5.0074868
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发表时间：
2022-01
影响因子：
3.2
通讯作者：
Mei Cui;Chenyu Guo;Zhenhai Yang;Li Chen;Yijun Dai;Houqiang Xu;Wei Guo;Jichun Ye
中科院分区：
文献类型：
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作者：
Mei Cui;Chenyu Guo;Zhenhai Yang;Li Chen;Yijun Dai;Houqiang Xu;Wei Guo;Jichun Ye
