Effect of misorientation angles on the surface morphologies of (001) homoepitaxial diamond thin films
Effect of misorientation angles on the surface morphologies of (001) homoepitaxial diamond thin films
复制标题
取向差角对(001)同质外延金刚石薄膜表面形貌的影响
DOI：
--
复制
发表时间：
1995
期刊：
影响因子：
--
通讯作者：
A. Badzian
中科院分区：
文献类型：
--
作者：
N. Lee;A. Badzian
Etching and homoepitaxial growth were performed on 0.1°, 3.5°, and 11.0° off (001) diamond substrates using microwave plasma‐assisted chemical vapor deposition. Etched surfaces showed a sequential morphological change from etch pits to stepped surface to flat surface with increasing misorientation angle. In homoepitaxial growth hillock formation on the (001) surface was ascribed to the lack of surface steps on the well‐oriented substrate, while the growth on the misoriented surfaces proceeded via step flow along 〈110〉. Reflection high‐energy electron diffraction showed that the films were single crystals and their surfaces were composed of the 2×1 and 1×2 double‐domain structure.
