c(4 × 8) periodicity in ultrathin iron silicides on Si(1 1 1)
c(4 × 8) periodicity in ultrathin iron silicides on Si(1 1 1)
复制标题
Si(1 1 1) 上超薄铁硅化物的 c(4 × 8) 周期性
DOI：
10.1016/s0169-4332(03)00084-9
复制
发表时间：
2003
影响因子：
6.7
通讯作者：
C. Pirri
中科院分区：
文献类型：
--
作者：
G. Garreau;S. Hajjar;S. Pelletier;M. Imhoff;C. Pirri
用扫描隧道显微镜(STM)和低能电子衍射(LEED)研究了用固相外延(SPE)方法在Si(111)衬底上生长的超薄硅化铁(DFE<；3ä)的结构。观察到与表面周期性的变化有关的相变，从(2×2)--通常在亚稳态FeSi2层上重构的表面--到c(4×8)周期--作为退火温度的函数。这种转变是最高硅层下方铁空位重组的结果(S)。
The structure of very thin iron silicides (dFe<3Å) grown by solid phase epitaxy (SPE) on Si(111) is investigated by means of scanning tunnelling microscopy (STM) and low energy electron diffraction (LEED). A phase transformation, associated with a change in the surface periodicity, from a (2×2)—the usual surface reconstruction on metastable FeSi2layers—toward a c(4×8) periodicity is observed as a function of the annealing temperature. This transformation results from a reorganisation of iron vacancies below the topmost Si layer(s).