Model for the voltage steps in the breakdown of the integer quantum Hall effect
Model for the voltage steps in the breakdown of the integer quantum Hall effect
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DOI：
10.1103/physrevlett.91.126803
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发表时间：
2003-09-19
影响因子：
8.6
通讯作者：
Eaves, L
中科院分区：
文献类型：
--
作者：
Martin, AM;Benedict, KA;Eaves, L
在用于维持美国电阻标准的样品中，无耗散整数量子霍尔效应的击穿作为一系列耗散电压阶跃发生。这种类型的击穿的机制，提出了基于磁激子的产生时，量子霍尔流体流过电离杂质超过临界速度。计算的产生率给出了一个电压阶跃高度与测量电子和空穴气体。我们还比较了这个模型的流体动力学描述的故障。
In samples used to maintain the U.S. resistance standard the breakdown of the dissipationless integer quantum Hall effect occurs as a series of dissipative voltage steps. A mechanism for this type of breakdown is proposed, based on the generation of magnetoexcitons when the quantum Hall fluid flows past an ionized impurity above a critical velocity. The calculated generation rate gives a voltage step height in good agreement with measurements on both electron and hole gases. We also compare this model to a hydrodynamic description of breakdown.