Influence of Tungsten Doping on the Performance of Indium-Zinc-Oxide Thin-Film Transistors
Influence of Tungsten Doping on the Performance of Indium-Zinc-Oxide Thin-Film Transistors
复制标题
钨掺杂对氧化铟锌薄膜晶体管性能的影响
DOI：
10.1109/led.2013.2278846
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发表时间：
2013-10-01
影响因子：
4.9
通讯作者：
Zhang, Qun
中科院分区：
文献类型：
--
作者：
Li, Honglei;Qu, Mingyue;Zhang, Qun
采用射频磁控溅射技术制备了非晶态铟锌钨氧化物(a-IZWO)沟道层和氧化铝栅绝缘层薄膜晶体管(TFT)。结果表明，钨掺杂比例对薄膜的性能有显著影响，钨的掺入对IZWO薄膜中的氧空位具有抑制作用。对a-IZWO薄膜的X-射线光电子能谱分析表明，与缺氧区相关的O1s峰随钨含量的增加而减小。当钨的摩尔比为6.2%时，得到的a-IZWO-TFTs的饱和迁移率为11.1 cm(2)/vs，电流通断比接近10(7)，亚阈值摆幅为0.31V/ten。
Thin-film transistors (TFTs) with amorphous indium-zinc-tungsten-oxide (a-IZWO) channel layer and aluminum oxide gate insulator were prepared by radio-frequency magnetron sputtering. It was found that tungsten doping ratios had a significant influence on the performance of the TFTs, and the tungsten incorporation acted as an oxygen vacancy suppressor in the IZWO thin film. The X-ray photoelectron spectroscopy of the a-IZWO thin film showed that the O1s peak associating with the oxygen-deficient regions decreased as the tungsten ratio increased. At tungsten molar ratio of 6.2%, the optimized a-IZWO-TFTs with the saturation mobility of 11.1 cm(2)/Vs, current ON/OFF ratio of similar to 10(7), and subthreshold swing of 0.31 V/decade was obtained.