Transport in Two-Dimensional Disordered Semimetals
Transport in Two-Dimensional Disordered Semimetals
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DOI：
10.1103/physrevlett.113.186801
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发表时间：
2014-10-27
影响因子：
8.6
通讯作者：
Demler, Eugene
中科院分区：
文献类型：
--
作者：
Knap, Michael;Sau, Jay D.;Demler, Eugene
我们从理论上研究二维半金属中的输运。通常，由于电势的平滑波动，电子和空穴水坑出现在这些系统的传输层中。本文利用有效介质近似和电阻网络上的互补映射，计算了电子-空穴液体在零和有限垂直磁场下的电响应。在存在的顺利无序和在一个弱的电子-空穴复合率的限制，我们发现小，但有限的重叠的电子和空穴带的电阻率突然上升时，降低温度，但没有发散在零温度。我们讨论了这种行为是如何相关的几个实验实现，并介绍了一个简单的物理解释这种效果。
We theoretically study transport in two-dimensional semimetals. Typically, electron and hole puddles emerge in the transport layer of these systems due to smooth fluctuations in the potential. We calculate the electric response of the electron-hole liquid subject to zero and finite perpendicular magnetic fields using an effective medium approximation and a complementary mapping on resistor networks. In the presence of smooth disorder and in the limit of a weak electron-hole recombination rate, we find for small but finite overlap of the electron and hole bands an abrupt upturn in resistivity when lowering the temperature but no divergence at zero temperature. We discuss how this behavior is relevant for several experimental realizations and introduce a simple physical explanation for this effect.