Structure and Magnetic Properties of Magnetostrictive FeGa Film on Single-Crystal ( 100 ) GaAs and ( 001 ) Si Substrate Fabricated by Pulsed Laser Deposition
Structure and Magnetic Properties of Magnetostrictive FeGa Film on Single-Crystal ( 100 ) GaAs and ( 001 ) Si Substrate Fabricated by Pulsed Laser Deposition
复制标题
脉冲激光沉积单晶(100)GaAs和(001)Si基片磁致伸缩FeGa薄膜的结构和磁性能
DOI：
10.1007/s40195-017-0686-0
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Shi Wangzhou
中科院分区：
文献类型：
--
作者：
Zhang Yi;Turghun Mutellip;Huang Chaojuan;Wang Tao;Wang Feifei;Shi Wangzhou
利用脉冲激光沉积系统在室温下分别在（100）取向的GaAs和（001）取向的Si衬底上沉积了不同膜厚和不同激光能量密度的FeGa薄膜。FeGa薄膜的材料结构和静态磁性随衬底和脉冲激光能量密度的变化而发生很大的变化。X射线衍射分析表明，GaAs衬底上存在D 03有序晶粒相和无序bcc A2结构的一级有序-无序结构。FeGa薄膜的矫顽力和剩磁随薄膜厚度和能量密度的变化呈现规律性的关系。然而，在Si衬底上的膜没有表现出结构变化，这可以归因于FeGa和Si之间的大的晶格失配。
FeGa thin film has been deposited on (100)-oriented GaAs and (001)-oriented Si substrates with different film thicknesses and laser energy densities at room temperature by pulsed laser deposition system. Materials structure and static magnetic of FeGa film have great changes depending on the substrate and energy density of pulsed laser. X-ray diffraction reveals the presence of first-order order–disorder structure of D03-ordered grain phase and disordered bcc A2 structure on GaAs substrate. The coercivity and remanence of FeGa film on GaAs substrate ratio show a regular dependence on the thickness and energy densities. However, film on Si substrate did not exhibit structure change, which can be attributed to a large lattice mismatch between FeGa and Si.