Picosecond digital-to-impulse generator in Silicon
Picosecond digital-to-impulse generator in Silicon
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硅皮秒数字脉冲发生器
DOI：
10.1109/sirf.2016.7445480
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
A. Babakhani
中科院分区：
文献类型：
--
作者：
M. Assefzadeh;A. Babakhani
本文提出了一种直接数字-脉冲转换结构，可产生记录脉冲宽度小于8ps、输出峰值功率为6 mW的脉冲。结果表明，产生的脉冲的定时可以锁定在输入触发器的边缘，具有很高的定时精度。脉冲峰值的大小是可编程的。除了时域测量外，还测量了从DC到75 GHz的频域频谱。在75 GHz频率下，产生的脉冲在峰值以下20d B处的频率稳定度优于4 Hz。脉冲序列还实现了优于240秒的定时抖动。该芯片采用130 nm SiGe BiCMOS工艺制造。
In this paper, a direct digital-to-impulse architecture is presented that generates impulses with a measured record pulse-width of shorter than 8psec and an output peak power of 6mW. It is shown that the timing of the generated impulses can be locked to the edge of an input trigger with a high timing accuracy. It is also shown that the peak amplitude of the impulses can be programmed. In addition to time-domain measurements, frequency-domain spectrum is measured from DC to 75GHz. At 75GHz, the generated impulses have a frequency stability of better than 4Hz at 20dB below peak. The impulse train also achieves a timing jitter of better than 240fsec. The chip is fabricated in a 130nm SiGe BiCMOS process.