Recovery of p-GaN surface damage induced by dry etching for the formation of p-type Ohmic contact
Recovery of p-GaN surface damage induced by dry etching for the formation of p-type Ohmic contact
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恢复干法刻蚀引起的 p-GaN 表面损伤以形成 p 型欧姆接触
DOI：
10.7567/1882-0786/ab13d7
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发表时间：
2019-05-01
影响因子：
2.3
通讯作者：
Yang, Hui
中科院分区：
文献类型：
--
作者：
He, Junlei;Zhong, Yaozong;Yang, Hui
在干蚀刻的P-GAN表面上的P型欧姆接触非常需要用于各种设备应用，而P-GAN则通过外延层或介电层掩埋在下面的P-GAN。但是，GAN干蚀刻过程通常会诱导表面损伤，并不可避免地降低P型欧姆接触性能。在这项工作中，通过使用湿化学蚀刻与NH3/N-2环境中的热处理，在干蚀刻的P-GAN表面上成功实现了与低比电阻率的P型欧姆接触。此外，通过原子力显微镜和X射线光电子光谱法对p-gan表面损伤的恢复机制进行了研究。 （c）2019年日本应用物理学会
P-type Ohmic contact on the dry-etched p-GaN surface is highly desired for various device applications with the p-GaN buried underneath by an epitaxial layer or a dielectric layer. However, GaN dry etching process usually induces surface damage and inevitably degrades the p-type Ohmic contact performance. In this work, p-type Ohmic contact with a low specific resistivity has been successfully realized on a dry-etched p-GaN surface by using a wet chemical etching combined with a thermal treatment in NH3/N2 ambient. Furthermore, the recovery mechanism of the p-GaN surface damage was studied through an in-depth surface characterization by atomic force microscopy and X-ray photoelectron spectroscopy.