Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing
Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing
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纳米线晶体管中源诱发的 RDF 压倒了 RTN：通过 GPU 计算加速全器件 EMC/MD 仿真的统计分析
DOI：
10.1109/iedm.2014.7047139
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Takanobu Watanabe
中科院分区：
文献类型：
--
作者：
Akito Suzuki;T. Kamioka;Y. Kamakura;K. Ohmori;K. Yamada;Takanobu Watanabe
我们数值模拟表明，在源极区中的随机掺杂波动（RDF）引起的Si纳米线（NW）晶体管的导通电流的显着变化，其效果是远远大于随机电报噪声（RTN）。这项工作评估的静态和动态变化的NW设备特性使用合奏蒙特卡罗/分子动力学（EMC/MD）模拟，采用并行计算技术，使用图形处理单元（GPU）。一维NW器件中的电流由源极边缘处的掺杂剂的数量决定，这表明形成突变的源极-沟道边界以抑制可变性的重要性。
We numerically demonstrate that a random dopant fluctuation (RDF) in a source region causes a noticeable variability in the on-current of Si nanowire (NW) transistors, and its effect is much larger than that of a random telegraph noise (RTN). This work assesses the static and dynamic variability of NW device characteristics using the ensemble Monte Carlo/molecular dynamics (EMC/MD) simulation, which employs parallel computing technique using a graphic processing unit (GPU). The current flow in a one-dimensional NW device is determined by the number of dopants at the source edge, indicating the importance of forming an abrupt source-channel boundary to suppress the variability.