Towards understanding the hydrogen molecule in ZnO
Towards understanding the hydrogen molecule in ZnO
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DOI：
10.1103/physrevb.90.205212
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发表时间：
2014-11
影响因子：
3.7
通讯作者：
S. Koch;E. Lavrov;J. Weber
中科院分区：
文献类型：
--
作者：
S. Koch;E. Lavrov;J. Weber
使用拉曼散射，分子氢缺陷存在于ZnO中，第一个II-VI族半导体中，这已被观察到。缺陷的旋转振动特性取决于样品的历史，并观察到核自旋态之间的邻-对位转换。
Using Raman scattering, molecular hydrogen defects are shown to exist in ZnO, the first II-VI semiconductor in which this has been observed. The rotational-vibrational properties of the defects are shown to depend on the history of the sample and an ortho-para conversion between the nuclear spin states is observed.