Match-making for Monolithic 3D IC: Finding the right technology node
Match-making for Monolithic 3D IC: Finding the right technology node
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单片 3D IC 匹配：寻找合适的技术节点
DOI：
10.1145/2897937.2898043
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
S. Lim
中科院分区：
文献类型：
--
作者：
Kyungwook Chang;S. Sinha;B. Cline;G. Yeric;S. Lim
单片3D集成电路（M3 D）有可能在功耗和性能扩展挑战方面取得突破。我们首次在多个技术节点的商业设计上对M3 D进行了全面的研究。M3 D的性能和功耗影响是使用一个商业的，有序的，32位应用处理器，在代工28纳米和14/16纳米工艺节点，以及预测的7纳米节点上实现的。我们研究了影响M3 D效率的技术节点因素，并提出了一个最佳技术和设计交互的路线图，以实现M3 D的全部权利。
Monolithic 3D IC (M3D) has the potential to provide a break-through in the power and performance scaling challenges. We, for the first time, present a comprehensive study of M3D on a commercial design across multiple technology nodes. The performance and power impact of M3D is investigated using a commercial, in-order, 32-bit application processor, implemented on foundry 28nm and 14/16nm process nodes, as well as a predictive 7nm node. We study the factors across the technology nodes that affect the efficiency of M3D, and propose a roadmap for optimum technology and design interaction that will enable the full entitlement of M3D.