New insights in high-energy electron emission and underlying transport physics of nanocrystalline Si
New insights in high-energy electron emission and underlying transport physics of nanocrystalline Si
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DOI：
10.1109/tnano.2003.820508
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发表时间：
2003-12
期刊：
影响因子：
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通讯作者：
S. Uno;K. Nakazato;S. Yamaguchi;A. Kojima;N. Koshida;H. Mizuta
中科院分区：
文献类型：
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作者：
S. Uno;K. Nakazato;S. Yamaguchi;A. Kojima;N. Koshida;H. Mizuta
本文定量分析了纳米晶硅点的电子发射，并在电子态和声子态计算的基础上讨论了纳米晶硅点的电子发射机制。从真空水平测量的发射能量分布的分析表明，在分布的峰值处的能量随着施加在纳米晶Si系统上的电压的增加而线性增加。无论工艺条件如何，线性定律的斜率都是1。增加电压显著地改变能量小于峰值的分布的形状，而它在能量大于峰值时具有最小的影响。传统的场致发射模型和金属-氧化物-半导体模型都不能解释这些行为。电子和声子态的计算表明，在一个链的纳米晶硅点的电子能量弛豫，这可能是一个可能的机制的高能电子发射现象的强烈抑制的可能性。
This paper presents quantitative analysis of electron emission from nanocrystalline Si dots, and discusses its mechanism based on the calculations of electronic and phononic states. Analysis of emission energy distribution measured from the vacuum level shows that the energy at the peak of the distribution increases linearly with increasing voltage applied across the nanocrystalline Si system. The slope of the linear law is unity, regardless of process conditions. Increasing voltage significantly changes the shape of the distribution at the energies smaller than the peak, while it has minimal impact at the energies larger than the peak. Both the conventional field emission model and the metal-oxide-semiconductor model fail to explain those behaviors. Calculations of electronic and phononic states in a chain of the nanocrystalline Si dots indicate a possibility of strong suppression of electron energy relaxation, which may be a possible mechanism of the high-energy electron emission phenomena.