Deep levels caused by misfit dislocations in GaAsSb/GaAs heterostructures
Deep levels caused by misfit dislocations in GaAsSb/GaAs heterostructures
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DOI：
10.1063/1.114984
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发表时间：
1995-08
影响因子：
4
通讯作者：
T. Wosinski;A. Makosa;T. Figielski;J. Raczyńska
中科院分区：
文献类型：
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作者：
T. Wosinski;A. Makosa;T. Figielski;J. Raczyńska
利用深能级瞬态谱研究了GaAs衬底上液相外延生长的GaAs 1 −xSbx（x=0%~ 3%）弛豫层中由晶格失配引起的两个深电子陷阱.其中一个陷阱，表现出非标准的对数俘获动力学，其能级与价带边缘相关，与α位错相关的电子态有关。另一个陷阱被归因于EL 2缺陷，并简要讨论了其在LPE生长层中意外形成的可能原因。
Two deep electron traps induced by lattice mismatch in relaxed GaAs1−xSbx layers (x=0% to 3%) grown by liquid phase epitaxy (LPE) on GaAs substrates have been revealed by means of deep‐level transient spectroscopy. One of the traps, that shows nonstandard, logarithmic capture kinetics and whose energy level is tied to the valence‐band edge, has been related to electron states associated with α dislocations. The other trap has been attributed to the EL2 defect and possible reasons of its unexpected formation in the LPE‐grown layers are briefly discussed.