DIRECT MEASUREMENT OF ION-INFLUENCED SURFACE DIFFUSION
DIRECT MEASUREMENT OF ION-INFLUENCED SURFACE DIFFUSION
复制标题
直接测量离子影响的表面扩散
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
E. Seebauer
中科院分区：
文献类型：
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作者：
R. Ditchfield;E. Seebauer
低能离子轰击对表面扩散的影响首次被直接量化。用15 ~ 65 thinspeV的惰性气体离子轰击锗在硅上的扩散，对扩散激活能和指前因子的影响与温度密切相关。奇怪的是，在大约850摄氏度以上，离子影响的扩散率实际上会降到福尔斯的热值以下。研究结果对离子辅助沉积法制备薄膜具有重要意义。{版权} {美国物理学会}
The influences of low-energy ion bombardment on surface diffusion have been quantified directly for the first time. Bombardment of germanium diffusing on silicon by noble gas ions between 15 and 65thinspthinspeV affects the diffusional activation energy and preexponential factor in a strongly temperature-dependent way. Curiously, above about 850thinsp{degree}C the ion-influenced diffusivity actually falls below the thermal value. The results have significant implications for thin film growth by ion-assisted deposition processes. {copyright} {ital 1999} {ital The American Physical Society}