Sequential phase formation by ion-induced epitaxy in Fe-implanted Si(001). Study of their properties and thermal behavior
Sequential phase formation by ion-induced epitaxy in Fe-implanted Si(001). Study of their properties and thermal behavior
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DOI：
10.1063/1.360821
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发表时间：
1996-01-15
影响因子：
3.2
通讯作者：
Maltez, RL
中科院分区：
文献类型：
--
作者：
Behar, M;Bernas, H;Maltez, RL
用离子束外延结晶方法研究了Fe注入Si（001）样品的FeSi 2硅化物外延生长。通过采用卢瑟福背散射/沟道光谱法和透射电子显微镜，它是可能的，以确定IBIEC过程中产生的γ-，α-，和β-FeSi 2相序列，随着增加的Fe浓度沿着注入剖面。γ-> α和α-> β相变的临界浓度分别为11和21 at. %。对这些相的热行为的研究表明，γ-和α-FeSi 2相对于β-FeSi 2相是亚稳的。γ到β-FeSi 2的转变通过奥斯特瓦尔德熟化过程在700摄氏度开始。此外，高Fe浓度样品的800摄氏度、1小时退火产生完全的α和γ到PFeSi 2的转变。最后，它表明，常规或快速热退火Fe注入的Si样品诱导只形成β-FeSi 2相。(C)1996年美国物理学会。
The epitaxial growth of FeSi2 silicides was studied by using ion-beam epitaxial crystallization (IBIEC) of Fe-implanted Si(001) samples. By employing Rutherford backscattering/channeling spectrometry and transmission electron microscopy it was possible to determine that the IBIEC process produces a gamma-, alpha-, and beta-FeSi2 phase sequence, with increasing Fe concentration along the implantation profile. The critical concentrations for gamma --> alpha and alpha --> beta phase transitions are 11 and 21 at. %, respectively. A study of the thermal behavior of these phases shows that the gamma- and alpha-FeSi2 are metastable with respect to the beta-FeSi2 phase. The gamma to beta-FeSi2 transition starts at 700 degrees C via an Ostwald ripening process. In addition a 800 degrees C, 1 h anneal of high Fe concentration samples produces a complete alpha and gamma to PFeSi2 transformation. Finally, it is demonstrated that a regular or a rapid thermal annealing on Fe-implanted Si samples induces only the formation of a beta-FeSi2 phase. (C) 1996 American Institute of Physics.