Donor and acceptor energies for muonium in GaAs
Donor and acceptor energies for muonium in GaAs
复制标题
GaAs 中锷的施主和受主能量
DOI：
10.1103/physrevb.76.045221
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
S. Kreitzman
中科院分区：
文献类型：
--
作者：
R. Lichti;H. Bani;B. R. Carroll;K. Chow;B. Hitti;S. Kreitzman
Analysis of existing data on muonium in GaAs provides an extensive set of ionization energies and barriers for motion and site transitions. Within an accepted model of muonium behavior in III-V compounds, these results establish the energy relationships among observed muonium centers in GaAs, including the metastable states. This analysis places the (0/+) donor level atbelow the conduction band edge and the (−/0) acceptor level at roughlyabove the top of the valence band for this very light hydrogen isotope, thus locating the muonium equivalent of the H(+/−) pinning level aboutabove midgap in GaAs, nearlyhigher than predicted.
