Analysis of tunable transmission properties in photonic crystals containing doped semiconductor
Analysis of tunable transmission properties in photonic crystals containing doped semiconductor
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DOI：
10.1016/j.optcom.2014.01.081
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发表时间：
2014-06
影响因子：
2.4
通讯作者：
Yang-Hua Chang;Mingyang Ou;Chien-Jang Wu
中科院分区：
文献类型：
--
作者：
Yang-Hua Chang;Mingyang Ou;Chien-Jang Wu
We investigate the tunable transmission properties in a photonic crystal (PC) that contains doped semiconductor,n-GaAs, as a defect layer. With the existence ofn-GaAs, the defect modes can be tuned by external magnetic field, doping concentration, and thickness of the defect layer. Among these three factors, the thickness of the defect layer is the most effective one. The analysis made is the near infrared region and the results are of technical use in the design of a filter with narrowband transmittance peaks.
