Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes
Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes
复制标题
DOI：
10.1063/1.4772549
复制
发表时间：
2012-12-17
影响因子：
4
通讯作者：
Chen, Zhong
中科院分区：
文献类型：
--
作者：
Lin, Yue;Zhang, Yong;Chen, Zhong
研究了InGaN发光二极管外量子效率的空间变化规律。两种不同类型的EQE下垂检查在一个单一的设备，提供明确的分析基础材料的物理过程中没有复杂的变化。微观缺陷、扩展缺陷和能量波动的相互作用决定了下垂的机制，这代表了各种光电器件中的共同主题。这两种下垂类型对应于影响载流子扩散和复合的能量波动的两种极端情况。这一发现提出了根据操作条件改善器件性能的方法。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4772549]
We investigate the spatial variation of the external quantum efficiency (EQE) of InGaN light-emitting diodes. Two different types of EQE droop are examined in one single device, offering unambiguous analyses on the underlying material physics without the complications of the processing variation. The interplays of microscopic defects, extended defects, and energy fluctuation dictate the mechanisms of the droop, which represents a common theme in various optoelectronic devices. The two droop types correspond to the two extreme situations of energy fluctuation that affects the carrier diffusion and recombination. The finding suggests ways for improving the device performance, depending on operation conditions. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4772549]