Reduction effect of thermal conductivity by introduction of epitaxial Ge nanodots in Si
Reduction effect of thermal conductivity by introduction of epitaxial Ge nanodots in Si
复制标题
在Si中引入外延Ge纳米点降低热导率的效果
DOI:
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发表时间:
2013
期刊:
影响因子:
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通讯作者:
Akira Sakai
中科院分区:
文献类型:
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作者:
Shuto Yamasaka;Yoshiaki Nakamura;Tomohiro Ueda;Shotaro Takeuchi;Akira Sakai