Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions
Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions
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DOI：
10.1063/1.5088041
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发表时间：
2018-10
影响因子：
3.2
通讯作者：
H. Turski;S. Bharadwaj;H. Xing;D. Jena
中科院分区：
文献类型：
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作者：
H. Turski;S. Bharadwaj;H. Xing;D. Jena
The frozen internal polarization-induced electric fields due to broken inversion symmetry in all conventional blue and green nitride semiconductor light-emitting semiconductor quantum well heterostructures point in a direction opposite to what is desired for efficient flow of electrons and holes. This state of affairs has persisted because of the desire to have p-type hole injectors on top of the quantum well active region. Because of the internal polarization fields in nitride异质结构，在这项工作中，有四个掺杂的掺杂和两极分化是对这项工作的最佳选择。联系人并通过防止电子过冲的量子井来允许有效的电流扩散，它可以在量化异质结构的未知区域中载用载体重组机构沿着这种状态的有效流动的方向与量子井的内部偏振场的有效性相反。由通过“底孔连接”的基本上有效地进行了有效的光发射的新方法。
The frozen internal polarization-induced electric fields due to broken inversion symmetry in all conventional blue and green nitride semiconductor light-emitting semiconductor quantum well heterostructures point in a direction opposite to what is desired for efficient flow of electrons and holes. This state of affairs has persisted because of the desire to have p-type hole injectors on top of the quantum well active region. Because of the internal polarization fields in nitride heterostructures, there exist four permutations of doping and polarization for the realization of such light emitters. Which permutation is the most desirable for efficient light emission? In this work, we answer this question by demonstrating a fundamentally new approach toward efficient light emission with “bottom-tunnel junctions.” The bottom-tunnel junction design aligns the polarization fields in the desired direction in the quantum well while simultaneously eliminating the need for p-type contacts and allowing efficient current spreading. By preventing electron overshoot past quantum wells, it disables carrier recombination in undesired regions of the quantized heterostructures and opens up the possibility for new geometries of integrating and stacking multiple light emitters.The frozen internal polarization-induced electric fields due to broken inversion symmetry in all conventional blue and green nitride semiconductor light-emitting semiconductor quantum well heterostructures point in a direction opposite to what is desired for efficient flow of electrons and holes. This state of affairs has persisted because of the desire to have p-type hole injectors on top of the quantum well active region. Because of the internal polarization fields in nitride heterostructures, there exist four permutations of doping and polarization for the realization of such light emitters. Which permutation is the most desirable for efficient light emission? In this work, we answer this question by demonstrating a fundamentally new approach toward efficient light emission with “bottom-tunnel junctions.” The bottom-tunnel junction design aligns the polarization fields in the desired direction in the quantum well while simultaneously eliminating the need for p-type contacts and allowing efficient curre...