High homogeneity 10 cm long BaTiO3-doped YBa2Cu3O7-delta films by the trifluoroacetate metal-organic deposition process

High homogeneity 10 cm long BaTiO3-doped YBa2Cu3O7-delta films by the trifluoroacetate metal-organic deposition process
复制标题

采用三氟乙酸金属有机沉积工艺制备高均匀性 10 cm 长 BaTiO3 掺杂 YBa2Cu3O7-δ 薄膜

DOI:
10.1007/s10971-020-05367-z
复制
发表时间:
2020
影响因子:
2.5
通讯作者:
Gu Hongwei
Gu Hongwei
中科院分区:
材料科学3区
文献类型:
--
作者:
Zhang Huiliang;Huang Daxing;Zhang Chunyuan;Ding Fazhu;Gu Hongwei

文献摘要

相似文献

三氟乙酸金属有机沉积(TFA-MOD)由于其低成本和高效率的优势,是生长高质量YBa2Cu3O7-δ(YBCO)涂层导体(CC)最有吸引力的途径之一。然而,基于TFA-MOD路线制备的YBCO CC的微观结构和超导性能的不均匀性仍然是一个挑战。本文在不同的低压条件下制备了10cm长的YBCO薄膜。使用浸涂机将这些 YBCO 薄膜沉积在缓冲哈氏合金 C276 胶带上。研究了不同环境压力对YBCO薄膜微观结构和临界电流密度的影响。获得了具有良好均匀性的高临界电流密度(JC)YBCO涂层导体。 YBCO涂层导体沿长度方向不同位置的JC值(77 K,自场)约为3.5-4 MA/cm2。结果表明,只有在合适的压力下,包覆导体沿长度方向的微观结构和临界电流密度的均匀性才能得到很大的提高。这种改进主要归因于良好的织构以及薄膜中不存在BaF2和Ba4Y2O7杂质相。
The trifluoroacetate metal-organic deposition (TFA-MOD) is one of the most appealing routes for the growth of high-quality YBa2Cu3O7-δ(YBCO) coated conductors (CCs) due to its advantages of low cost and high efficiency. However, the puzzle of the inhomogeneities in microstructures and superconducting properties of YBCO CCs prepared based on the TFA-MOD route remain still a challenge. In this paper, 10 cm long YBCO films were prepared under different low-pressure conditions. These YBCO films were deposited on buffered Hastelloy C276 tapes using a dip coater. The effect of different ambient pressures on the microstructure and critical current density of YBCO films was investigated. High critical current density (JC) YBCO coated conductors with good homogeneity were obtained. TheJCvalues (77 K, self-field) at different positions along the length direction of YBCO coated conductor were around 3.5–4 MA/cm2. The results showed that only under a suitable pressure the homogeneities of the microstructure and critical current density along the length direction of coated conductor can be greatly improved. The improvement was mainly ascribed to good texture and the absence of impurity phases BaF2and Ba4Y2O7in the films.