New technique for sublimation growth of AlN single crystals
New technique for sublimation growth of AlN single crystals
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DOI：
10.1557/s109257830000017x
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
Yingguo Shi;B. Liu;Lianghong Liu;J. Edgar;E. A. Payzant;J. Hayes;M. Kuball
中科院分区：
文献类型：
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作者：
Yingguo Shi;B. Liu;Lianghong Liu;J. Edgar;E. A. Payzant;J. Hayes;M. Kuball
通过新技术成功生长了氮化铝（AlN）单晶片。它包括（1）在1100°C以下通过金属有机化学气相沉积（MOCVD）在SiC衬底上沉积AlN缓冲层，（2）通过冷凝在1800°C温度下从AlN-SiC粉末源混合物升华的蒸气，在AlN薄膜上形成（AlN）x（SiC）1−x合金膜，然后（3）冷凝从纯AlN源升华的蒸气（在1800°C）。通过对有和没有 MOCVD AlN 缓冲层的 SiC 衬底上合金的初始成核研究，说明了前两个步骤对于在 SiC 衬底上成功升华生长的必要性：AlN MOCVD 缓冲层导致连续的单晶粒生长模式； (AlN)x(SiC)1−x合金膜降低了裂纹密度，因为其热膨胀系数介于SiC和AlN之间。 X 射线衍射 (XRD) 和拉曼光谱研究表明 AlN 单晶的高质量。
Single crystalline platelets of aluminum nitride (AlN) were successfully grown by a new technique. It consists of (1) depositing an AlN buffer layer on a SiC substrate by metal organic chemical vapor deposition (MOCVD) below 1100°C, (2) forming an (AlN)x(SiC)1−x alloy film on the AlN film by condensing vapors sublimated at a temperature of 1800°C from a source mixture of AlN-SiC powders, followed by (3) condensing vapors sublimated from a pure AlN source (at 1800°C). The necessity of the first two steps for the successful AlN sublimation growth on SiC substrate was illustrated by the initial nucleation studies of alloys on SiC substrates with and without MOCVD AlN buffer layers: an AlN MOCVD buffer layer leads to continuous, single grain growth mode; The (AlN)x(SiC)1−x alloy film reduces the crack density because its thermal expansion coefficient is intermediate between SiC and AlN. X-ray diffraction (XRD) and Raman spectroscopy studies indicated the high quality of the AlN single crystal.