Drift-Diffusion Modeling for Impurity Photovoltaic Devices
Drift-Diffusion Modeling for Impurity Photovoltaic Devices
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DOI：
10.1109/ted.2009.2032741
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发表时间：
2009-10
影响因子：
3.1
通讯作者：
Albert Lin;J. Phillips
中科院分区：
文献类型：
--
作者：
Albert Lin;J. Phillips
本文提出了杂质光致发光器件的一维漂移扩散模型。该模型是基于泊松方程和载流子连续性方程的自洽解，结合产生和复合机制，包括中间状态。该模型被应用到一个原型的太阳能电池设备，其中强的空间电荷效应和降低的转换效率被确定为轻掺杂的吸收区的情况下。提出了一种掺杂补偿方案来减轻空间电荷效应，最佳掺杂对应于中间态浓度的一半。补偿掺杂装置设计提供约40%的计算转换效率，其类似于来自先前0-D模型的最大预期值。中间水平之间的载流子输运被证明是非关键的实现0-D模型预测的效率限制。该模型的定性行为相比，现有的量子点太阳能电池的实验数据。
A 1-D drift-diffusion modeling for impurity photovoltaics is presented. The model is based on the self-consistent solution of Poisson's equation and carrier continuity equations incorporating generation and recombination mechanisms including the intermediate states. The model is applied to a prototypical solar cell device, where strong space charge effects and reduced conversion efficiency are identified for the case of lightly doped absorption regions. A doping compensation scheme is proposed to mitigate the space charge effects, with optimal doping corresponding to one-half the concentration of the intermediate states. The compensated doping device design provides calculated conversion efficiencies of approximately 40%, which is similar to the maximum expected values from prior 0-D models. The carrier transport between intermediate levels is shown to be noncritical for achieving the efficiency limit predicted by 0-D models. The qualitative behavior of the model is compared to existing experimental data on quantum dot solar cells.