Effect of PbTiO3 Seeding Layer on the Growth of Sol-Gel-Derived Pb(Zr0.53Ti0.47)O3 Thin Film
Effect of PbTiO3 Seeding Layer on the Growth of Sol-Gel-Derived Pb(Zr0.53Ti0.47)O3 Thin Film
复制标题
PbTiO3 晶种层对溶胶-凝胶法 Pb(Zr0.53Ti0.47)O3 薄膜生长的影响
DOI：
10.1143/jjap.37.5128
复制
发表时间：
1998
影响因子：
1.5
通讯作者：
T. Hayashi
中科院分区：
文献类型：
--
作者：
K. Ishikawa;Kazunari Sakura;D. Fu;S. Yamada;Hisao Suzuki;T. Hayashi
采用溶胶-凝胶法在Pt/Ti/SiO2/Si衬底上制备了锆钛酸铅（PZT）薄膜。一个薄的PbTiO 3层，厚度约30 nm，沉积在Pt表面上作为种子层，以提供PZT结晶的成核位点。在室温下用脉冲激光烧蚀法制备种子层并退火后，观察到PZT具有较强的（001）择优取向。这一结果可以用“两步增长”模型来解释。PZT薄膜的织构和微结构可以通过引入薄的种子层来控制，该种子层降低了结晶温度，并且使得可以获得由非常细的晶粒组成的薄膜。铁电材料的介电性能可以通过改变晶粒尺寸来控制。
Lead zirconate titanate (PZT) films prepared by a sol-gel method were deposited on Pt/Ti/SiO2/Si substrates with a seeding layer. A thin PbTiO3 layer, about 30 nm in thickness, was deposited on the Pt surface as the seeding layer to provide a nucleation site for PZT crystallization. Strong (001)-preferred orientation of PZT was observed when the seeding layer was deposited by pulsed laser ablation at room temperature and annealed subsequently. This result was explained by a "two-step growth" model. The texture and microstructure of PZT films can be controlled by the introduction of a thin seeding layer which lowers the crystallization temperature and makes it possible to obtain films composed of very fine grains. The dielectric properties of ferroelectric materials could be controlled by changing the grain size.