Temperature dependent electron transport in graphene
Temperature dependent electron transport in graphene
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DOI：
10.1140/epjst/e2007-00221-9
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发表时间：
2007-09-01
影响因子：
2.8
通讯作者：
Kim, P.
中科院分区：
文献类型：
--
作者：
Tan, Y.-W.;Zhang, Y.;Kim, P.
我们研究了不同载流子密度下石墨烯中的电子输运。通过将单层石墨烯机械提取到氧化硅/硅衬底上，然后通过标准微制造技术将单层石墨烯制造成霍尔条形器件。从磁阻和霍尔测量，我们测量的载流子密度和迁移率在不同的栅极电压。在高迁移率和低迁移率的样品中发现了不同的温度依赖性电阻率行为。
We have investigated the electron transport in graphene at different carrier densities. Single layer graphene was fabricated into Hall bar shaped devices by mechanical extraction onto a silicon oxide/silicon substrate followed by standard microfabrication techniques. From magnetoresistance and Hall measurements, we measure the carrier density and mobility at different gate voltages. Different temperature dependent resistivity behaviors are found in samples with high and low mobilities.