Temperature Control of Diffusive Memristor Hysteresis and Artificial Neuron Spiking
Temperature Control of Diffusive Memristor Hysteresis and Artificial Neuron Spiking
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DOI：
10.1103/physrevapplied.19.024065
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发表时间：
2022-02
影响因子：
4.6
通讯作者：
D. Pattnaik;Y. Ushakov;Zhong Zhou;P. Borisov;M. Cropper;U. W. Wijayantha;A. Balanov;S. Savel’ev
中科院分区：
文献类型：
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作者：
D. Pattnaik;Y. Ushakov;Zhong Zhou;P. Borisov;M. Cropper;U. W. Wijayantha;A. Balanov;S. Savel’ev
忆阻器件是节能神经形态计算和未来人工智能系统的有前途的元素。对于扩散型忆阻器，由于Ag纳米颗粒在电介质基质中的漂移和扩散导致器件端子之间的导电柱的顺序形成和消失，从而发生器件状态切换。该过程由施加到器件触点的电压控制。在这里，无论是在实验中，在理论上，我们证明，不同的温度提供了一个有效的控制忆阻器的状态和电荷传输的设备。我们发现，通过升高和降低器件温度，可以重置忆阻器状态，以及改变当在恒定施加电压下在忆阻电路中产生电流尖峰时忆阻器停留在高电阻状态和低电阻状态的剩余时间。我们的理论模型与实验结果有很好的定性一致性，有助于解释所报道的效应。
Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, the device state switching occurs because of the sequential formation and disappearance of conduction pillars between device terminals due to the drift and diffusion of Ag nanoparticles in the dielectric matrix. This process is governed by the application of the voltage to the device contacts. Here, both in experiment and in theory we demonstrate that varying temperature offers an efficient control of memristor states and charges transport in the device. We found out that by raising and lowering the device temperature, one can reset the memristor state as well as change the residual time the memristor stays in high and low resistive states when the current spiking is generated in the memristive circuit at a constant applied voltage. Our theoretical model demonstrates a good qualitative agreement with the experiments and helps to explain the effects reported.