Epitaxial growth of two-dimensional stanene
Epitaxial growth of two-dimensional stanene
复制标题
二维锡烯的外延生长
DOI：
10.1038/nmat4384
复制
发表时间：
2015-10-01
期刊：
影响因子：
41.2
通讯作者：
Jia, Jin-feng
中科院分区：
文献类型：
--
作者：
Zhu, Feng-feng;Chen, Wei-jiong;Jia, Jin-feng
在第一次实验实现石墨烯之后，人们又探索了其他具有前所未有的电子性能的超薄材料，特别是重的IV族元素Si、Ge和Sn.二维屈曲硅基硅烯是最近通过分子束外延生长的，而锗基锗烯是通过分子束外延和机械剥离获得的。然而，到目前为止，锡基斯坦烯的合成一直被证明是具有挑战性的。在这里，我们报道了用分子束外延技术成功地制备了2D单烯，并结合第一性原理计算，用扫描隧道显微镜和角度分辨光电子能谱进行了原子和电子结构的表征。单烯及其衍生物的合成将促进对其理论预测性质的进一步实验研究，例如具有很大禁带的二维拓扑绝缘行为，以及支持增强的热电性能、拓扑超导电性和近室温量子反常霍尔效应的能力。
Following the first experimental realization of graphene, other ultrathin materials with unprecedented electronic properties have been explored, with particular attention given to the heavy group-IV elements Si, Ge and Sn. Two-dimensional buckled Si-based silicene has been recently realized by molecular beam epitaxy growth, whereas Ge-based germanene was obtained by molecular beam epitaxy and mechanical exfoliation. However, the synthesis of Sn-based stanene has proved challenging so far. Here, we report the successful fabrication of 2D stanene by molecular beam epitaxy, confirmed by atomic and electronic characterization using scanning tunnelling microscopy and angle-resolved photoemission spectroscopy, in combination with first-principles calculations. The synthesis of stanene and its derivatives will stimulate further experimental investigation of their theoretically predicted properties, such as a 2D topological insulating behaviour with a very large bandgap, and the capability to support enhanced thermoelectric performance, topological superconductivity and the near-room-temperature quantum anomalous Hall effect.