Directional and ionized physical vapor deposition for microelectronics applications
Directional and ionized physical vapor deposition for microelectronics applications
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用于微电子应用的定向和电离物理气相沉积
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
S. Rossnagel
中科院分区：
文献类型：
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作者：
S. Rossnagel
半导体晶片上互连特征的制造已经从基于剥离的蒸发发展到反应离子蚀刻金属化，并且现在发展到大马士革技术。物理溅射沉积已广泛用于毯覆金属膜沉积，但对于高纵横比形貌是不切实际的。过滤或定向溅射技术（例如长投射或准直）已用于一些高纵横比应用，但具有效率差、成本高和/或缩放差的缺点。离子化溅射沉积（其使用溅射金属原子的飞行中离子化和随后的借助于衬底电势的膜沉积）已经被开发为将物理气相沉积扩展到更高纵横比的技术。
The manufacturing of interconnect features on semiconductor wafers has evolved from lift-off-based evaporation to reactive ion etching metallization and now to Damascene technology. Physical sputter deposition has been widely used for blanket metal film deposition, but is impractical for high aspect topographies. Filtered, or directional sputter techniques, such as long throw or collimation, have been used for some high aspect ratio applications, but suffer from poor efficiency, high cost, and/or poor scaling. Ionized sputter deposition, which uses in-flight ionization of sputtered metal atoms and subsequent film deposition by means of a substrate potential, has been developed as a technique to extend physical vapor deposition into higher aspect ratios.