Room-temperature epitaxial growth of GaN on lattice-matched ZrB2 substrates by pulsed-laser deposition
Room-temperature epitaxial growth of GaN on lattice-matched ZrB2 substrates by pulsed-laser deposition
复制标题
DOI：
10.1063/1.2137876
复制
发表时间：
2005-11
影响因子：
4
通讯作者：
Y. Kawaguchi;J. Ohta;A. Kobayashi;H. Fujioka
中科院分区：
文献类型：
--
作者：
Y. Kawaguchi;J. Ohta;A. Kobayashi;H. Fujioka
我们已经在室温下（RT）通过使用脉冲激光沉积技术在ZrB2衬底上生长GaN薄膜。反射高能电子衍射观察表明，GaN生长可以发生在一个层一层的模式，即使在RT，和薄膜的表面是原子级平坦的。我们发现，混合反应在GaN scinZrB2异质界面，这一直是最严重的问题，这种结构到现在为止，很好地抑制在RT生长的情况下。电子背散射衍射测量表明，即使薄膜厚度低至20 nm，RT GaN的倾斜角和扭转角也分别为0.23°和0.24°。RT GaN在薄膜生长的早期阶段表现出相当高的结晶度，这一事实可以归因于该系统的小晶格失配。
We have grown GaN films on ZrB2 substrates at room temperature (RT) by using a pulsed-laser deposition technique. Reflection high-energy electron diffraction observations have revealed that GaN growth can occur in a layer-by-layer mode, even at RT, and that the surfaces of the films are atomically flat. We found that intermixing reactions at the GaN∕ZrB2 heterointerfaces, which have been the most serious problem for this structure until now, are well suppressed in the case of RT growth. Electron backscattered diffraction measurements have revealed that the tilt angle and the twist angle of the RT GaN are 0.23° and 0.24°, respectively, even for film thicknesses as low as 20 nm. The fact that RT GaN exhibits quite high crystallinity from the early stages of film growth can be attributed to the small lattice mismatch of this system.