2D In2S3 Nanoflake Coupled with Graphene toward High-Sensitivity and Fast-Response Bulk-Silicon Schottky Photodetector
2D In2S3 Nanoflake Coupled with Graphene toward High-Sensitivity and Fast-Response Bulk-Silicon Schottky Photodetector
复制标题
二维 In2S3 纳米片与石墨烯耦合用于高灵敏度和快速响应体硅肖特基光电探测器
DOI：
10.1002/smll.201904912
复制
发表时间：
2019-10-14
期刊：
影响因子：
13.3
通讯作者：
Li, Jingbo
中科院分区：
文献类型：
--
作者：
Lu, Jianting;Zheng, Zhaoqiang;Li, Jingbo
硅基电子器件，特别是石墨烯/硅光电探测器（Gr/Si PDs），由于其结构简单，具有灵活的肖特基结集成而引起了人们的广泛关注。然而，由于相对较差的光-物质相互作用和硅的迁移率，这些Gr/Si pd通常在光响应性和响应速度之间遭受不可避免的妥协。本文提出了一种将二维In2S3与Gr/Si pd耦合的新策略。双异质结设计的引入，不仅加强了石墨烯/Si的光吸收，而且结合了光门效应和光伏效应的优点，抑制了暗电流，加速了光生载流子的分离，带来了光导增益。因此，In2S3/石墨烯/Si器件同时具有4.53 x 10(4) a W-1的超高光响应率和小于40 μ s的快速响应速度。这些参数比原始的Gr/Si pd高一个数量级，与已报道的2D材料/Si异质结pd相比，这些参数是最佳值之一。此外，In2S3/石墨烯/Si PD表现出出色的长期稳定性，即使在空气中放置1个月或1000次循环运行后，性能下降也可以忽略不计。这些发现为构建高灵敏度和超快的Gr/Si pd提供了一种简单而新颖的策略，可用于进一步的光电应用。
Silicon-based electronic devices, especially graphene/Si photodetectors (Gr/Si PDs), have triggered tremendous attention due to their simple structure and flexible integration of the Schottky junction. However, due to the relatively poor light-matter interaction and mobility of silicon, these Gr/Si PDs typically suffer an inevitable compromise between photoresponsivity and response speed. Herein, a novel strategy for coupling 2D In2S3 with Gr/Si PDs is demonstrated. The introduction of the double-heterojunction design not only strengthens the light absorption of graphene/Si but also combines the advantages of the photogating effect and photovoltaic effect, which suppresses the dark current, accelerates the separation of photogenerated carriers, and brings photoconductive gain. As a result, In2S3/graphene/Si devices present an ultrahigh photoresponsivity of 4.53 x 10(4) A W-1 and fast response speed less than 40 mu s, simultaneously. These parameters are an order of magnitude higher than pristine Gr/Si PDs and among the best values compared with reported 2D materials/Si heterojunction PDs. Furthermore, the In2S3/graphene/Si PD expresses outstanding long-term stability, with negligible performance degradation even after 1 month in air or 1000 cycles of operation. These findings highlight a simple and novel strategy for constructing high-sensitivity and ultrafast Gr/Si PDs for further optoelectronic applications.